Excercise | Tutorial to Spin Electronics

Lv-Nr
0000004171
Excercise
S 2019
Description

Electrical transport in metals:

- Boltzmann-equation, scattering processes

- electrical and magnetic properties of metals

- magnetoresistance and Hall-effect, anomalous Hall-effect

- 2 spin-channel model

 

Magnetoelectronics:

-positive magnetoresistance

-negative magnetoresistance

-anisotropic magnetoresistance

-colossal magnetoresistance

-giant magnetoresistance, osciallating exchange interaction, exchange anisotropy, artificial antiferromagnets, intrinsic and extrinsic GMR

-spin valves

-tunnel magnetoresistance

-ferromagnet/insulator/superconductor heterostructures

-extraordinary magnetoresistance

 

Spinelectronics:

-spininjection into semiconductors

-spin-light emitting diodes and spin-transistors

 

Applications:

-XMR-sensors

-magnetoresistive read heads, hard disk drives

-magnetic random access memory

Dates
Tuesday, 30.04.2019, 13:15 - 14:00
Tuesday, 07.05.2019, 13:15 - 14:00
Tuesday, 14.05.2019, 13:15 - 14:00
Tuesday, 21.05.2019, 13:15 - 14:00
Tuesday, 28.05.2019, 13:15 - 14:00
Tuesday, 04.06.2019, 13:15 - 14:00
Tuesday, 18.06.2019, 13:15 - 14:00
Tuesday, 25.06.2019, 13:15 - 14:00
Tuesday, 02.07.2019, 13:15 - 14:00
Tuesday, 09.07.2019, 13:15 - 14:00
Tuesday, 16.07.2019, 13:15 - 14:00
Tuesday, 23.07.2019, 13:15 - 14:00
Module
Part of Module Spin Electronics